Infineon BSZ123N08NS3: A Comprehensive Technical Overview of the 30 V OptiMOS Power MOSFET

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing these challenges, Infineon Technologies' BSZ123N08NS3 stands as a prime example of advanced MOSFET engineering, offering an exceptional blend of low losses, robust performance, and miniaturization for a wide range of applications.

This device is part of Infineon's renowned OptiMOS™ power MOSFET family, which is specifically engineered for low-voltage applications. As a 30 V N-channel MOSFET, the BSZ123N08NS3 is tailored for use in scenarios where both high current handling and fast switching speeds are paramount. Its primary applications include high-frequency DC-DC conversion in server and telecom power supplies, synchronous rectification stages, and motor control circuits in industrial and consumer environments.

The standout feature of this MOSFET is its extremely low figure-of-merit (FOM = R DS(on) Q G). This metric is crucial as it quantifies the trade-off between conduction losses (governed by on-resistance) and switching losses (governed by gate charge). The BSZ123N08NS3 achieves a remarkably low on-resistance of just 1.7 mΩ (max.) at V GS = 10 V, while maintaining a low total gate charge (Q G). This combination ensures that the device operates with minimal power loss, leading to cooler operation and higher overall system efficiency.

Packaged in the space-saving SuperSO8 (PG-TSDSON-8), the BSZ123N08NS3 is designed for optimal thermal and electrical performance. The package features an exposed thermal pad that allows for efficient heat dissipation away from the silicon die, which is critical for maintaining performance under high current loads. This makes it an ideal choice for compact, power-dense designs where board space is at a premium.

Furthermore, the MOSFET is characterized by its high peak current capability, supporting demanding transient load conditions. It also boasts a 100% avalanche tested ruggedness, ensuring high reliability and robustness in harsh operating environments where voltage spikes may occur.

ICGOOODFIND: The Infineon BSZ123N08NS3 30 V OptiMOS MOSFET is a superior component that masterfully balances ultra-low conduction losses with fast switching performance. Its exceptional efficiency, compact packaging, and proven reliability make it an outstanding choice for designers pushing the limits of power supply and motor drive innovation.

Keywords: OptiMOS, Low RDS(on), Synchronous Rectification, Power Efficiency, SuperSO8