Infineon IPB107N20N3G: Key Features and Application Circuit Design Considerations
The Infineon IPB107N20N3G is a state-of-the-art OptiMOS 5 power MOSFET engineered to deliver exceptional efficiency and robustness in a wide array of power conversion applications. Housed in a space-saving TO-263-7 (D2PAK-7) package, this N-channel device is characterized by its ultra-low on-state resistance (R DS(on)) of just 1.07 mΩ (max. at V GS = 10 V) and a drain-to-source voltage (V DS) rating of 200 V. These attributes make it an ideal choice for high-current switching tasks where minimizing conduction losses is paramount.
A primary driver of its performance is the advanced super-junction technology, which drastically reduces the figure of merit (R DS(on) x Q G). This translates into two major system benefits: significantly higher efficiency and the ability to operate at higher switching frequencies. Operating at a higher frequency allows for the use of smaller passive components like inductors and capacitors, leading to more compact and cost-effective power supply designs.
Key Features:
Low R DS(on): 1.07 mΩ (typ.) ensures minimal conduction losses, even under high load currents.
High Current Capability: Continuous drain current (I D) of 120 A at 25°C.
Optimized Switching Performance: Low gate charge (Q G) and low effective output capacitance (C OSS(eff)) enable fast switching and reduced turn-on/turn-off losses.
Avalanche Rated: Provides ruggedness and reliability in harsh operating environments.
Excellent Thermal Performance: The 7-pin package offers an additional source connection that improves thermal dissipation and reduces parasitic source inductance.
Application Circuit Design Considerations
Integrating the IPB107N20N3G into a design requires careful attention to several critical areas to harness its full potential.
1. Gate Driving:
A robust gate driver is essential. The driver must be capable of sourcing and sinking large peak currents to rapidly charge and discharge the MOSFET's input capacitance (C ISS). This minimizes the time spent in the linear region, reducing switching losses. A gate driver IC with a drive voltage of 10-12V is recommended to ensure the MOSFET fully enhances and achieves the advertised R DS(on). The gate resistor (R G) should be optimized to control the switching speed, balancing between EMI generation and switching losses.
2. Layout Parasitics:
Parasitic inductance in the high-current loop (drain-source path) and the gate loop must be absolutely minimized. These parasitics can cause severe voltage spikes, ringing, and potential false turn-on events. Employ a low-inductance layout strategy: use a large, continuous ground plane, keep the loop areas for power and gate circuits as small as possible, and utilize the multiple pins of the D2PAK-7 package effectively for decoupling and source connection.
3. Thermal Management:
Despite its low R DS(on), the device can dissipate significant power at high currents. Effective heatsinking is non-negotiable. The exposed metal pad of the package must be soldered to a sufficiently large copper area on the PCB, which acts as a primary heat sink. For high-power applications, an external heatsink will likely be required. Thermal vias can be used to transfer heat to inner or bottom layers of the PCB.
4. Protection Circuits:
Implement necessary protection mechanisms. An overcurrent protection circuit (e.g., desaturation detection) can safeguard the MOSFET from short-circuit events. A snubber circuit might be needed across the drain and source to dampen voltage spikes and reduce EMI, especially if layout parasitics cannot be fully eliminated.
The Infineon IPB107N20N3G represents a top-tier solution for designers seeking to maximize power density and efficiency in systems such as server and telecom SMPS, solar inverters, motor drives, and Class D audio amplifiers. Its outstanding combination of the lowest R DS(on) in its class, high switching speed, and superior package makes it a compelling component for the next generation of high-performance power electronics.
Keywords:
Power MOSFET
Low R DS(on)
Switching Losses
Thermal Management
Gate Driving
