Infineon IPL60R105P7AUMA1 CoolMOS™ P7 Power Transistor: Datasheet, Specifications, and Application Notes

The relentless pursuit of higher efficiency and power density in modern electronics has propelled the development of advanced power semiconductors. At the forefront of this innovation is Infineon Technologies with its CoolMOS™ family. The IPL60R105P7AUMA1, a member of the groundbreaking CoolMOS™ P7 series, stands as a testament to this progress, offering designers a superior component for high-performance switching applications.

This article delves into the key specifications, datasheet insights, and practical application notes for this state-of-the-art Power MOSFET.

Datasheet Overview and Key Specifications

The datasheet for the IPL60R105P7AUMA1 reveals a component engineered for excellence. It is an N-channel power transistor built on Infineon's proprietary superjunction (SJ) technology, which is the core of the CoolMOS™ P7's performance leap.

Its defining feature is an exceptionally low specific on-state resistance (R DS(on)) for a given die size. The part number itself signifies a drain-source voltage (V DS) of 650 V and a maximum R DS(on) of 105 mΩ at a gate-source voltage of 10 V. This low resistance directly translates to reduced conduction losses, a primary source of heat in power converters.

Other critical specifications include:

Continuous Drain Current (I D): Up to 18 A at 25°C, ensuring robust current handling capability.

Superior Switching Performance: The P7 technology is optimized for minimal switching losses, even at high frequencies. This is achieved through improved internal capacitances and gate charge (Q G) characteristics, enabling faster switching and higher operating frequencies.

High Robustness and Reliability: It features a high avalanche ruggedness and an integrated source-drain diode with excellent reverse recovery characteristics, making it highly resilient in demanding environments like industrial motor drives or power supplies.

Package: Housed in a TO-220 FullPAK package. This fully molded, isolated package offers a higher creepage distance and simplifies the thermal management and mounting process by not requiring an additional insulating washer.

Application Notes and Circuit Design Considerations

The IPL60R105P7AUMA1 is ideally suited for a wide array of high-efficiency SMPS (Switch-Mode Power Supplies) and power conversion stages. Its primary applications include:

Server, Telecom, and Industrial SMPS (particularly Power Factor Correction - PFC and LLC resonant converters).

Lighting Solutions: High-power LED drivers.

Motor Control and Drive circuits for industrial automation.

To fully leverage its capabilities, designers should consider the following:

1. Gate Driving: While it offers low gate charge, a proper gate driver circuit is essential. A driver IC with adequate sink/source current capability (e.g., 2A - 3A) is recommended to ensure swift turn-on and turn-off, minimizing transition times and associated losses.

2. PCB Layout: As with any high-frequency switching device, layout is critical. Minimizing parasitic inductance in the high-current loop (drain and source paths) is paramount to reduce voltage spikes and electromagnetic interference (EMI). Use short, wide traces and place decoupling capacitors close to the device.

3. Thermal Management: Despite its high efficiency, heat dissipation must be managed. The low R DS(on) reduces the need for large heatsinks, but ensuring a low thermal resistance path from the package to the ambient environment (or heatsink) is crucial for reliable long-term operation. The FullPAK package simplifies this by providing isolation.

ICGOODFIND Summary: The Infineon IPL60R105P7AUMA1 CoolMOS™ P7 transistor is a high-efficiency, high-reliability power MOSFET that sets a new benchmark for 650V switches. Its standout features are its extremely low on-state resistance and optimized switching dynamics, which collectively minimize both conduction and switching losses. This makes it an ideal choice for designers aiming to push the limits of power density and energy efficiency in modern AC-DC converters, industrial drives, and other demanding power electronics applications.

Keywords: CoolMOS™ P7, 650V Power MOSFET, Low R DS(on), High-Efficiency Switching, Superjunction Technology