Infineon IPP076N12N3G: High-Performance OptiMOS 3 Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, achieving higher efficiency, power density, and reliability is paramount. The Infineon IPP076N12N3G stands out as a premier solution, engineered to meet these demanding requirements. This N-channel power MOSFET, part of Infineon's renowned OptiMOS™ 3 family, is specifically designed for high-performance switching applications, making it an ideal choice for power conversion stages in systems like server and telecom SMPS, solar inverters, and motor drives.

A key metric for any power switch is its on-state resistance, and the IPP076N12N3G excels with an exceptionally low RDS(on) of just 7.6 mΩ at 10 V. This ultra-low resistance is fundamental to minimizing conduction losses, which directly translates into higher efficiency and reduced heat generation. Designers can leverage this to create more compact systems by reducing the need for large heat sinks or to push for higher power output within the same thermal constraints.

The device is rated for a drain-source voltage (VDS) of 120 V and a continuous drain current (ID) of 36 A, offering a robust and versatile platform for a wide array of intermediate voltage applications. Its performance is further enhanced by its outstanding switching characteristics. The low gate charge (QG) and figures of merit (FOM) like RDS(on) x QG ensure swift and efficient switching transitions. This is critical for high-frequency operation, as it significantly reduces switching losses—a major source of inefficiency in converters.

Packaged in the innovative TO-220 FullPAK, this MOSFET provides a critical advantage: full isolation between the component and the heatsink. This simplifies the mechanical design and assembly process by eliminating the need for additional insulating hardware, thereby improving reliability and reducing the overall Bill of Materials (BOM) cost.

Furthermore, the OptiMOS™ 3 technology is synonymous with high robustness and longevity. The IPP076N12N3G features an intrinsic body diode with excellent reverse recovery characteristics, enhancing its resilience in hard-switching inductive circuits. This makes it exceptionally reliable in demanding environments where operational stability is non-negotiable.

ICGOOFind: The Infineon IPP076N12N3G is a superior OptiMOS™ 3 power MOSFET that delivers a potent combination of ultra-low RDS(on), fast switching speed, and a thermally efficient isolated package. It is an optimal component for engineers focused on maximizing the efficiency and power density of their next-generation power conversion systems.

Keywords: OptiMOS™ 3, Low RDS(on), Efficient Power Conversion, TO-220 FullPAK, Fast Switching