Infineon IPD90N06S4-07: High-Performance N-Channel MOSFET for Automotive and Industrial Applications

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in electronic systems has made the choice of switching components more critical than ever. In the demanding arenas of automotive and industrial electronics, the Infineon IPD90N06S4-07 stands out as a premier N-channel power MOSFET engineered to meet these stringent challenges head-on.

This MOSFET is built using Infineon’s advanced OptiMOS™ power transistor technology, a platform renowned for its exceptional performance. The device boasts an ultra-low on-state resistance (R DS(on)) of just 3.7 mΩ (max. at V GS = 10 V), which is a key figure of merit. This exceptionally low resistance translates directly into minimized conduction losses, leading to higher overall system efficiency and reduced heat generation. This is paramount in applications where thermal management is a primary concern, such as in tightly packed engine control units (ECUs) or space-constrained industrial motor drives.

A cornerstone of the IPD90N06S4-07's design is its robustness and reliability for 42 V automotive systems. It is AEC-Q101 qualified, certifying that it meets the rigorous quality and reliability standards required for use in automotive applications. It can withstand high load dump pulses and other voltage transients common in the harsh electrical environments of vehicles. This makes it an ideal choice for a wide array of automotive functions, including electric power steering (EPS), braking systems, transmission control, and fuel pumps.

Beyond the automotive sector, this MOSFET excels in a variety of industrial scenarios. Its high switching speed and low gate charge (Q G typ. 75 nC) ensure efficient operation in switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits. The low FOM (Figure of Merit) allows for higher switching frequencies, which in turn enables the use of smaller passive components, reducing the overall size and cost of the system.

The device is offered in a space-saving, rugged DSO-8 (TO-252) package, which provides an excellent power-to-size ratio and superior thermal characteristics, facilitating effective heat dissipation away from the silicon die.

ICGOOODFIND: The Infineon IPD90N06S4-07 is a top-tier N-channel MOSFET that delivers an outstanding blend of ultra-low R DS(on), high robustness, and automotive-grade reliability. It is a powerful enabling component for designers striving to create more efficient, compact, and reliable power management solutions in the most demanding environments.

Keywords: OptiMOS™, Low R DS(on), AEC-Q101, Automotive Grade, Power Management.