Infineon IPB0401NM5S: High-Performance NanoOptimal N-Channel Power MOSFET

In the relentless pursuit of higher efficiency and power density in modern electronics, the Infineon IPB0401NM5S stands out as a premier solution. This N-Channel Power MOSFET, part of Infineon's innovative NanoOptimal™ portfolio, is engineered to deliver exceptional performance in a remarkably compact package, addressing the critical needs of space-constrained and power-hungry applications.

At the heart of this MOSFET's superiority is its advanced NanoOptimal™ technology. This proprietary process technology strikes an optimal balance between low on-state resistance (RDS(on)) and low gate charge (QG). The result is a device that offers minimal switching and conduction losses, which is paramount for enhancing overall system efficiency. With a maximum RDS(on) of just 4.2 mΩ at VGS = 10 V, the IPB0401NM5S ensures that power is delivered with minimal waste, reducing heat generation and improving thermal management.

Encased in the ultra-compact PG-TSLP-5-11 (TSLP5) package, this MOSFET is a testament to the trend of miniaturization. Measuring just 1.0 x 1.5 mm, its incredibly small footprint makes it an ideal candidate for applications where board space is at a premium. Despite its diminutive size, it is robust, capable of handling a continuous drain current (ID) of up to 16 A and a maximum drain-source voltage (VDS) of 40 V. This combination of high current handling and a small form factor is perfectly suited for a wide array of modern power management tasks.

The primary applications for the IPB0401NM5S are found in areas demanding high efficiency and reliability. It excels in:

Load switching in smartphones, tablets, and wearables.

DC-DC conversion in point-of-load (POL) regulators and voltage regulator modules (VRMs).

Power management integrated circuits (PMICs) for portable and battery-operated devices.

Motor control in small drones and other consumer robotics.

Furthermore, the device features an ultra-low threshold voltage and is designed for use with low gate drive voltages, typically down to 2.5 V. This characteristic makes it directly compatible with modern microcontrollers and digital ASICs, simplifying design-in and reducing the need for additional driver circuitry.

ICGOOODFIND: The Infineon IPB0401NM5S is a top-tier component that masterfully combines high electrical performance with extreme miniaturization. Its NanoOptimal™ technology ensures superior efficiency, making it an exceptional choice for designers aiming to push the boundaries of power density and battery life in next-generation portable and compact electronic products.

Keywords: NanoOptimal™ Technology, Low RDS(on), PG-TSLP-5-11 Package, High Power Density, Load Switching.