Infineon BSC098N10NS5: A High-Performance N-Channel MOSFET for Advanced Power Management Applications
The relentless pursuit of higher efficiency, greater power density, and enhanced thermal performance in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is the Infineon BSC098N10NS5, an N-channel MOSFET that exemplifies the cutting-edge advancements in power management for a wide array of demanding applications.
Engineered using Infineon's proprietary OptiMOS™ 5 technology, the BSC098N10NS5 is designed to set a new benchmark in performance. This 100V MOSFET is characterized by its exceptionally low on-state resistance (R DS(on)) of just 9.8 mΩ, a critical factor that directly translates to minimized conduction losses. When combined with its outstanding switching performance, this low R DS(on) ensures that the device operates with high efficiency, making it an ideal choice for high-frequency switch-mode power supplies (SMPS), DC-DC converters, and motor control systems where every percentage point of efficiency is crucial.
A key strength of the BSC098N10NS5 lies in its optimized gate charge (Q G). This parameter is vital for achieving fast switching speeds, which allows for higher operating frequencies. This, in turn, enables designers to reduce the size of passive components like inductors and capacitors, leading to more compact and lightweight end-products without sacrificing performance. The low figure-of-merit (FOM, or R DS(on) x Q G) confirms its superior dynamic characteristics.
Furthermore, the device boasts excellent robustness and reliability. It features a high avalanche ruggedness and an extended safe operating area (SOA), ensuring stable operation under strenuous conditions, including overloads and voltage spikes. Its low thermal resistance and high maximum junction temperature further contribute to its ability to manage power effectively in thermally constrained environments, such as in server power supplies, telecom infrastructure, and automotive systems.
The package itself, the SuperSO8, is a significant contributor to its performance. This package offers a very low parasitic inductance and an efficient cooling capability through its exposed drain pad, which enhances thermal dissipation to the PCB. This makes the BSC098N10NS5 not only a high-performance switch but also a solution that aids in managing the thermal design of the entire system.
ICGOODFIND: The Infineon BSC098N10NS5 stands as a top-tier component for engineers focused on maximizing efficiency and power density. Its optimal blend of ultra-low R DS(on), fast switching speed, and robust thermal performance, all delivered in a modern package, makes it an indispensable solution for the next generation of advanced power management designs.
Keywords: OptiMOS™ 5 Technology, Low On-State Resistance (R DS(on)), High Switching Frequency, Power Efficiency, SuperSO8 Package.
