Infineon IPA60R385CP: A High-Performance Superjunction MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor components. At the heart of many advanced switch-mode power supplies (SMPS), motor drives, and renewable energy inverters lies the power MOSFET. The Infineon IPA60R385CP stands out as a prime example of advanced Superjunction (SJ) technology, engineered to meet these challenges head-on by offering an exceptional blend of low losses, high robustness, and superior switching performance.
This MOSFET is characterized by its ultra-low specific on-resistance (R DS(on)) of just 0.0385 Ω (typ.) at 10 V. This key parameter is crucial as it directly translates to reduced conduction losses when the device is in its on-state. Lower resistance means less energy is wasted as heat, enabling designers to create more efficient power conversion stages or use smaller heatsinks, thereby saving space and cost. The IPA60R385CP achieves this low R DS(on) while maintaining a high drain-source voltage (V DS) rating of 650 V, making it exceptionally suitable for operation from rectified mains voltages in applications like power factor correction (PFC) circuits and telecom/server SMPS.
Beyond static losses, dynamic switching performance is paramount for high-frequency operation. The IPA60R385CP exhibits excellent switching characteristics, including low gate charge (Q G) and small output capacitance (C OSS). These features contribute to faster switching transitions and minimized switching losses, which are the dominant loss factor at high frequencies. This allows system designers to push switching frequencies higher, leading to the use of smaller passive components like inductors and transformers, which significantly increases overall power density.
Robustness and reliability are non-negotiable in power design. The IPA60R385CP is designed with a strong avalanche ruggedness and an extended safe operating area (SOA), ensuring stable and reliable operation even under harsh conditions, such as during overvoltage transients or inductive switching events. This intrinsic durability enhances the longevity and field reliability of the end product. Furthermore, the device features a fast intrinsic body diode, which is advantageous in bridge topologies like totem-pole PFC, reducing the need for external anti-parallel diodes and simplifying the design.
Housed in the industry-standard TO-220 FullPAK package, the IPA60R385CP offers effective and reliable isolation between the mounting surface (heatsink) and the electrically live tab. This simplifies the mechanical assembly process and improves safety by eliminating the need for an additional insulating kit.
ICGOODFIND: The Infineon IPA60R385CP is a high-efficiency Superjunction MOSFET that sets a high benchmark for performance. Its defining attributes are its ultra-low on-resistance for minimal conduction losses, superior switching speed for high-frequency operation, and exceptional avalanche ruggedness for maximum system reliability. It is an optimal choice for designers aiming to maximize efficiency and power density in a wide range of AC-DC and DC-DC conversion topologies.
Keywords: Superjunction MOSFET, High Efficiency, Low On-Resistance, Fast Switching, Power Conversion.
