Infineon IPA60R650CE: Redefining High-Voltage Power Switching Efficiency

The Infineon IPA60R650CE stands as a pinnacle of high-voltage power transistor technology, engineered to meet the rigorous demands of modern power electronics. As part of the CoolMOS™ CE series, this 650V superjunction MOSFET combines exceptional switching performance with robust reliability, making it a preferred choice for applications such as switched-mode power supplies (SMPS), industrial motor drives, photovoltaic inverters, and lighting systems.

A key highlight of the IPA60R650CE is its ultra-low on-state resistance (RDS(on)) of just 60 mΩ, which significantly reduces conduction losses. This efficiency translates into lower heat generation and higher overall system reliability. Additionally, the device leverages Infineon’s advanced charge compensation principle, enabling faster switching speeds and reduced electromagnetic interference (EMI). These characteristics are critical for designers seeking to achieve higher power density and improved thermal management.

The transistor also features enhanced body diode robustness, allowing for improved hard commutation and reverse recovery behavior. This makes it particularly suitable for topologies like power factor correction (PFC) and half-bridge configurations where body diode performance is crucial.

Another standout trait is its optimized gate charge (Qg), which ensures minimal driving losses and simplified gate driver design. Engineers can operate the device at higher frequencies without compromising efficiency, thereby enabling smaller passive components and more compact system layouts.

With its industry-leading TO-220 package and compliance with international safety and environmental standards, the IPA60R650CE offers both performance and peace of mind for high-voltage power conversion tasks.

ICGOOODFIND

The Infineon IPA60R650CE sets a new benchmark in high-efficiency power switching with its low RDS(on), fast switching capability, and superior thermal performance, making it an ideal solution for next-generation power systems.

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Keywords:

CoolMOS™ CE, Low RDS(on), High Voltage MOSFET, Power Efficiency, Fast Switching