Infineon BSS606NH6327XTSA1 N-Channel MOSFET: Datasheet, Pinout, and Application Circuit
The Infineon BSS606NH6327XTSA1 is a popular N-Channel enhancement mode Power MOSFET fabricated using Infineon's advanced SMD (Surface-Mount Device) trench technology. This technology is engineered to provide excellent on-state performance, characterized by very low on-state resistance (RDS(on)) and high current handling capability in a compact package. It is a key component for power management tasks, making it highly suitable for a wide range of automotive, industrial, and consumer applications where efficiency and space are critical.
Datasheet Overview
The datasheet for the BSS606NH6327XTSA1 provides all the essential electrical characteristics and maximum ratings necessary for safe and effective circuit design. Key parameters include:
Drain-Source Voltage (VDS): 60 V – Suitable for a variety of low-voltage power applications.
Continuous Drain Current (ID): 4.3 A at a case temperature of 25°C.
On-State Resistance (RDS(on)): A remarkably low 28 mΩ (max) at VGS = 10 V and ID = 2.1 A. This low resistance is crucial for minimizing conduction losses and improving overall system efficiency, as it reduces the voltage drop across the MOSFET and the heat generated during operation.
Gate Threshold Voltage (VGS(th)): Typically between 1.35 V and 2.35 V, making it compatible with both 3.3 V and 5 V logic levels from microcontrollers and other digital circuits.
Package: Housed in a SOT-223 (SC-73) surface-mount package, which offers a good balance between compact size and power dissipation capability.
Pinout Configuration
The SOT-223 package has four pins, but the drain is internally connected to a large tab for heat dissipation. The standard pinout is as follows:
Pin 1 (Gate): This is the control pin. The voltage applied between the Gate and Source (VGS) controls the flow of current between the Drain and Source.
Pin 2 (Drain): The input pin for the load current. The primary current being switched flows into this pin.
Pin 3 (Source): The output and common ground reference pin. The switched current flows out of this pin.
Pin 4 (Drain): This is the large tab, which is electrically connected to the Drain (Pin 2). Its primary function is to provide a path for heat to transfer from the silicon die to the printed circuit board (PCB) for improved thermal performance.
Typical Application Circuit: Low-Side Switch
One of the most common uses for an N-Channel MOSFET like the BSS606NH6327XTSA1 is as a low-side switch. This configuration is ideal for controlling loads such as motors, solenoids, or LEDs. The circuit is simple yet highly effective.
How it works:
1. The load (e.g., a DC motor) is connected between the positive supply voltage (VDD, e.g., 12V or 24V) and the Drain pin of the MOSFET.
2. The Source pin is connected directly to ground.
3. A microcontroller (MCU) GPIO pin, typically operating at 3.3V or 5V, is used to control the MOSFET.
4. A gate resistor (e.g., 10Ω to 100Ω) is placed in series between the MCU and the Gate pin. This resistor helps dampen any ringing or oscillations caused by the MOSFET's inherent gate capacitance and PCB trace inductance, ensuring stable switching.
5. A pull-down resistor (e.g., 10 kΩ) is connected from the Gate to ground (Source). This resistor is critical as it ensures the MOSFET remains firmly off when the MCU pin is in a high-impedance state (e.g., during startup or reset), preventing any false triggering.
When the MCU output goes HIGH (logic '1'), it applies a voltage (VGS) greater than the threshold voltage to the Gate, turning the MOSFET ON. This creates a low-resistance path between Drain and Source, allowing current to flow through the load to ground, thus activating it.
When the MCU output goes LOW (logic '0'), the Gate is pulled to ground by the pull-down resistor, VGS falls below the threshold, and the MOSFET turns OFF, stopping the current flow and deactivating the load.
ICGOODFIND: The Infineon BSS606NH6327XTSA1 stands out as an exceptionally efficient and robust N-Channel MOSFET. Its very low RDS(on) in the SOT-223 package makes it a superior choice for designers seeking to minimize power loss and heat generation in space-constrained applications like DC-DC converters, motor control, and power management systems. Its logic-level compatibility further simplifies design with modern microcontrollers.
Keywords: Low RDS(on), Logic Level, SOT-223, Low-Side Switch, Power Management.
