**HMC1119LP4METR: A High-Performance Silicon MMIC Amplifier for 24 GHz to 44 GHz Applications**

The relentless drive for higher data rates and more sophisticated sensing capabilities continues to push the boundaries of wireless technology into the millimeter-wave (mmWave) frequency spectrum. Operating within the critical **Ka-band and upper K-band**, frequencies from 24 GHz to 44 GHz are essential for a wide array of modern applications, including 5G infrastructure, satellite communications, automotive radar, and advanced test and measurement systems. At the heart of these systems lies a critical component: the power amplifier. The **HMC1119LP4METR** from Analog Devices Inc. stands out as a premier solution, a **monolithic microwave integrated circuit (MMIC)** engineered to deliver exceptional performance across this demanding frequency range.

Fabricated on a advanced silicon process, this amplifier exemplifies the maturity and capability of silicon-based MMIC technology for mmWave applications. It is designed to provide a significant **gain of 19 dB**, which is remarkably flat across the entire band, ensuring consistent signal amplification. This high level of gain is crucial for compensating for losses in transmission lines, filters, and other components within a signal chain, thereby improving overall system signal-to-noise ratio (SNR).

Beyond high gain, the HMC1119LP4METR is optimized for **high output power and linearity**. It achieves a saturated output power (PSAT) of up to +24 dBm and an output third-order intercept point (OIP3) of approximately +33 dBm. These performance metrics are vital for applications requiring high dynamic range and low distortion, such as in multi-carrier communication links and high-resolution radar systems. The device also features a positive power supply bias scheme, simplifying the power management design for system engineers.

Housed in a compact, RoHS-compliant 4 mm x 4 mm, 24-lead LFCSP package, the amplifier is designed for surface-mount technology (SMT), facilitating high-volume manufacturing. Its **excellent gain flatness and high linearity** make it an ideal driver amplifier for transmit chains or a low-noise amplifier in receive chains, offering designers a versatile and reliable building block. Furthermore, its silicon construction offers a compelling advantage in cost-effectiveness and integration potential compared to gallium arsenide (GaAs) alternatives, especially for volume production.

**ICGOO**DFIND

The HMC1119LP4METR is a high-performance, cost-effective silicon MMIC power amplifier that delivers high gain, excellent linearity, and robust output power across the 24 GHz to 44 GHz range, making it an indispensable component for next-generation 5G, satellite, and radar systems.

**Keywords:** MMIC Amplifier, Ka-Band, High Linearity, 5G Infrastructure, Output Power